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Application of GaN in 5G


Radio frequency gallium nitride technology is the perfect 5G, base station amplifier USES gallium nitride.Gallium nitride (GaN), gallium arsenide (GaAs) and indium phosphide (InP) are commonly used semiconductor materials in radio frequency applications.


Compared with high frequency processes such as gallium arsenide and indium phosphide, the output power of gallium nitride devices is higher.Compared with power processes such as LDCMOS and silicon carbide (SiC), gallium nitride has better frequency characteristics.It is important that gallium nitride devices have higher instantaneous bandwidths, and the use of carrier polymerization techniques and the readiness to use higher frequency carriers are intended to achieve greater bandwidths.


Gallium nitride is faster than silicon or other devices.GaN can achieve higher power density.GaN has the advantage of small volume for the given power level.With smaller devices, device capacitance can be reduced, making the design of higher-bandwidth systems easier.Rf circuit is a key component of PA (Power Amplifier, Power Amplifier).


In terms of current applications, power amplifiers are mainly composed of gallium arsenide power amplifiers and complementary MOS power amplifiers (CMOS PA), of which GaAs PA is the mainstream. However, with the advent of 5G, gallium arsenide devices will not be able to maintain high integration at such a high frequency.


So GaN becomes the next hot spot.As a wide bandgap semiconductor, gallium nitride can withstand higher operating voltage, which means that its power density and operating temperature are higher. Therefore, gallium nitride has the characteristics of high power density, low energy consumption, suitable for high frequency and wide bandwidth.


Qualcomm President Cristiano Amon said at the 2018 qualcomm 4G / 5G summit that he expects two waves of 5G phones to hit the market in the first half of next year and the end of Christmas and New Year, and the first commercial 5G phones will be launched soon.5G technology is expected to deliver speeds of 10 to 100 times faster than current 4G networks, reaching the gigabit per second level, while reducing latency more effectively, according to the company.


In multi-input multi-output (MIMO) applications, the key technology of 5 g Massive base station transceiver letters on using large number (such as 32/64) antenna array to achieve a greater wireless data traffic and connection reliability, this architecture need to form a complete set of corresponding rf transceiver cell array, so the number of rf devices will greatly increased, the size of the device is the key, using GaN small size, high efficiency and power density of the characteristics of big can realize high set solutions, such as modular rf front-end device.


At the same time, in 5G millimeter wave applications, GaN's high power density characteristics can effectively reduce the number of transceiver channels and the size of the overall scheme under the same coverage conditions and user tracking function.Achieve optimal combination of performance costs.